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| ON Semiconductor ) High Voltage NPN Silicon Power Transistors . . . designed for high voltage inverters, switching regulators and line-operated amplifier applications. Especially well suited for switching power supply applications. 2N6497 5 AMPERE POWER TRANSISTORS NPN SILICON 250 VOLT 80 WATTS * High Collector-Emitter Sustaining Voltage - * * VCEO(sus) = 250 Vdc (Min) Excellent DC Current Gain hFE = 10-75 @ IC = 2.5 Adc Low Collector-Emitter Saturation Voltage @ IC = 2.5 Adc - VCE(sat) = 1.0 Vdc (Max) 4 II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II III I I II I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I III I I II II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB Value 250 350 6.0 5.0 10 2.0 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 80 0.64 Watts W/_C _C TJ,Tstg -65 to +150 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 1.56 _C/W (1) Indicates JEDEC Registered Data. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 11 Publication Order Number: 2N6497/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I III I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Fall Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc) *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Storage Time (VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc) Rise Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) (IC = 5.0 Adc, IB = 2.0 Adc) Collector-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) (IC = 5.0 Adc, IB = 2.0 Adc) DC Current Gain (IC = 2.5 Adc, VCE = 10 Vdc) (IC = 5.0 Adc, VCE = 10 Vdc) Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 350 Vdc, VBE(off) = 1.5 Vdc) (VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (1) (IC = 25 mAdc, IB = 0) + 11 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA tr, tf v 10 ns DUTY CYCLE = 1.0% t, TIME ( s) 0 - 9.0 V 25 s Figure 1. Switching Time Test Circuit Characteristic RB [ 20 - 5.0 V D1 VCC + 125 V RC [ 50 http://onsemi.com SCOPE 2N6497 2 0.01 0.05 0.07 0.1 0.02 0.03 0.07 0.05 0.1 0.2 0.3 1.0 0.7 0.5 VCEO(sus) VCE(sat) VBE(sat) Symbol IEBO ICEX Cob hFE fT ts tr tf VCC = 125 V IC/IB = 5.0 TJ = 25C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) td @ VBE(off) = 5.0 V Min 250 5.0 10 3.0 - - - - - - - - - - - tr 0.45 Typ 1.4 0.4 - - - - - - - - - - - - Max 150 1.0 2.5 1.0 1.5 2.5 1.0 5.0 1.0 1.0 10 75 - - - pF s s s - Figure 2. Turn-On Time mAdc mAdc MHz Unit Vdc Vdc Vdc 5.0 2N6497 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 t1 0.01 0.02 0.03 SINGLE PULSE t2 SINGLE PULSE P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 RJC(max) = 1.56C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 3. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 dc TC = 25C BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 5.0 7.0 50 70 100 200 300 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 5.0 ms 1.0 ms 100 s 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 Figure 4. Active-Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6. POWER DERATING FACTOR (%) 10 7.0 5.0 3.0 t, TIME ( s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.1 100 ts VCC = 125 V IC/IB = 5.0 TJ = 25C 80 60 40 20 0 THERMAL DERATING SECOND BREAKDOWN DERATING tf 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 5. Turn-Off Time Figure 6. Power Derating http://onsemi.com 3 2N6497 TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 70 hFE, DC CURRENT GAIN 50 30 20 -55C 4.0 3.2 2.4 1.6 0.8 IC = 1.0 A 2.0 A 3.0 A 5.0 A VCE = 10 V TJ = 25C 25C 10 7.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 0 0.01 0.02 0.05 0.1 0.2 1.0 0.5 IB, BASE CURRENT (mA) 2.0 5.0 10 Figure 7. DC Current Gain Figure 8. Collector Saturation Region 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 +4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 VB for VBE *VC for VCE(sat) 25C to 150C *APPLIES FOR IC/IB v hFE @ VCE + 10 V 3 VBE(sat) @ IC/IB = 5.0 VBE @ VCE = 10 V -55C to 25C 25C to 150C -55 to 25C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 5.0 0.2 0.3 0.5 0.7 1.0 0 0.05 0.07 0.1 IC/IB = 2.5 2.0 3.0 5.0 -3.0 0.05 0.07 0.1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages Figure 10. Temperature Coefficients 104 IC, COLLECTOR CURRENT ( A) 103 102 101 100 10-1 10-2 -0.1 25C REVERSE -0.2 FORWARD 0 +0.2 +0.4 +0.6 VCE = 200 V TJ = 150C 100C 1000 700 500 C, CAPACITANCE (pF) 300 200 100 70 50 30 20 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 60 100 VR, REVERSE VOLTAGE (VOLTS) 200 400 Cob TJ = 25C Cib VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cutoff Region Figure 12. Capacitance http://onsemi.com 4 2N6497 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J http://onsemi.com 5 2N6497 Notes http://onsemi.com 6 2N6497 Notes http://onsemi.com 7 2N6497 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6497/D This datasheet has been download from: www..com Datasheets for electronics components. |
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